It has been reported by GN that Samsung is going to show the next gen 3 nanometer semiconductor to US President on his forthcoming visit to Seoul.
The new semiconductor is built on the Gate-All-around (GAA) technology. The GAA technology allows up to 35% decrease in size while providing 30% higher performance or 50% lower power consumption.
Samsung has said that 2nmprocess node was in the early stages of development and will begin its mass production in 2025.
Read more about it at: Gadgets Now
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